Other articles related with "FP efficiency":
127305 Wei Mao(毛维), Ju-Sheng Fan(范举胜), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
  Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate
    Chin. Phys. B   2016 Vol.25 (12): 127305-127305 [Abstract] (974) [HTML 1 KB] [PDF 514 KB] (518)
97203 Mao Wei(毛维),Yang Cui(杨翠),Hao Yao(郝跃), Ma Xiao-Hua(马晓华), Wang Chong(王冲),Zhang Jin-Cheng(张进成), Liu Hong-Xia(刘红侠), Bi Zhi-Wei(毕志伟), Xu Sheng-Rui(许晟瑞), Yang Lin-An(杨林安), Yang Ling(杨凌), Zhang Kai(张凯), Zhang Nai-Qian(张乃千),and Pei Yei(裴轶)
  The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT
    Chin. Phys. B   2011 Vol.20 (9): 97203-097203 [Abstract] (1426) [HTML 0 KB] [PDF 303 KB] (1021)
First page | Previous Page | Next Page | Last PagePage 1 of 1